編號(hào)NO. 項(xiàng)目規(guī)格單位UNITS ITEMSSPECIFICATIONS1拉制方式CZ GrowingMethod1拉制方式CZ GrowingMethod2材料單晶硅 MaterialMonocrystallineSilicon3導(dǎo)電類(lèi)型 摻雜劑P/BorP/Ga mmType Dopant4硅片尺寸125*125 0.5 見(jiàn)附圖1 SeeFigure1mmWaferSize5直徑150 0.5mmDiameter6垂直度90 0.3 Perpendicularity7厚度200 20 mThickness8總厚度變化 30 mTTV9電阻率A:0.5 3 B:3 6 cmResistivity10少子壽命 10 sMinorityCarrierLife11晶向＜100＞ 2.0 　Orientation12位錯(cuò)密度 3000pcs/cm2DislocationDensity13氧含量 1*1018(ASTMF121-83)atoms/cm3OxygenContent14碳含量 5*1016(ASTMF123-83)atoms/cm3CarbonContent15崩邊深度Depth 0.3mm,長(zhǎng)度Length 0.5mm EdgeDefect(最多2處)(Max2pieces)16沾污無(wú) ContaminationAreaNone17線痕 20 mSawMark18翹曲度 50 mWarpage 硅片型號(hào)WaferType尺寸(mm)DimensionAB C DMaxMinMaxMinMaxMinMaxMin125I125.5124.5150.5149.584823129 125II125.5124.5165.5164.51091071311