中紅外超級LED23系列波長2.3-2.39um開關(guān)時間30ns使用溫度-240度至50度TO-18封裝LightEmittingDiodeswithcentralwavelength2,31mmseriesarebasedonheterostructuresgrownonGaSbsubstratesbyLPE.SolidsolutionsGaInAsSbareusedintheactivelayer.WidebandgapsolidsolutionsAlGaAsSbwithAlcontent64%areusedforgoodelectronconfinement.LightEmittingDiodeswithcentralwavelength2,31mmseriesarebasedonheterostructuresgrownonGaSbsubstratesbyLPE.SolidsolutionsGaInAsSbareusedintheactivelayer.WidebandgapsolidsolutionsAlGaAsSbwithAlcontent64%areusedforgoodelectronconfinement.LightEmittingDiodeswithcentralwavelength2,31mmseriesarebasedonheterostructuresgrownonGaSbsubstratesbyLPE.SolidsolutionsGaInAsSbareusedintheactivelayer.WidebandgapsolidsolutionsAlGaAsSbwithAlcontent64%areusedforgoodelectronconfinement.LightEmittingDiodeswithcentralwavelength2,31mmseriesarebasedonheterostructuresgrownonGaSbsubstratesbyLPE.SolidsolutionsGaInAsSbareusedintheactivelayer.WidebandgapsolidsolutionsAlGaAsSbwithAlcontent64%areusedforgoodelectronconfinement.LightEmittingDiodeswithcentralwavelength2,31mmseriesarebasedonheterostructuresgrownonGaSbsubstratesbyLPE.SolidsolutionsGaInAsSbareusedintheactivelayer.WidebandgapsolidsolutionsAlGaAsSbwithAlcontent64%areusedforgoodelectronconfinement.LightEmittingDiodeswithcentralwavelength2,31mmseriesarebasedonheterostructuresgrownonGaSbsubstratesbyLPE.SolidsolutionsGaInAsSbareusedintheactivelayer.WidebandgapsolidsolutionsAlGaAsSbwithAlcontent64%areusedforgoodelectronconfinement.LightEmittingDiodeswithcentralwavelength2,31mmseriesarebasedonheterostructuresgrownonGaSbsubstratesbyLPE.SolidsolutionsGaInAsSbareusedintheactivelayer.WidebandgapsolidsolutionsAlGaAsSbwithAlcontent64%areusedforgoodelectronconfinement.
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