MulticrystallineSiliconWaferSpecificationsCrystallinityMulti-CrystallineConductivitytype:P-type(borondoped)Geometry:SquareLifetime: 2 soningotResisitivity:0.5~3.0?-cm163CarbonContent: 5x10atoms/cm173OxygenContent: 8x10atoms/cmWaferSize:156mmx156mm 0.5mmCenterThickness:200 m 30 mChips: 2ea;notlongerthan1mm 1ea,notlongerthan5mm,notdeeperthanEdgeDefects:0.5mmAscutandcleaned.NostainsvisiblewithnakedWaferSurface:eyeSawmark: 20 mTTV: 40 mBow: 50 mWarp: 50 mAnglebetweensquaresides:90o 0.3o