型號(hào)/規(guī)格1N60品牌/商標(biāo)UTC(臺(tái)灣友順）封裝形式SOT-223環(huán)保類別普通型安裝方式貼片式包裝方式盒帶編帶包裝 DESCRIPTION THEUTC1N60isahighvoltageMOSFETandisdesignedtohavebettercharactertriatica,suchasfastawitchingtime,lowgatecharge.lowon-ataterealatancaandhaveahigh ruggedavalanvhecharacteriatlca.ThepowerMOSFETisussallyusedathighapeedswichingapplicationainpowersuppliea,PWMmotorcontroia.highefflclentDCtoDCconvertersandbridgecircults. FEATURES *VDS=600V *ID=1.2A*RDS(ON)=11.5?@VGS=10V.*UltraLowgatecharge(typical5.0nC)*Lowreversetransfercapacitance(CRSS=typical3.0pF) 1*Fastswitchingcapability *Avalancheenergyspecified*Improveddv/dtcapability,highruggedness